Publication
IEDM 2016
Conference paper

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

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Abstract

We present a 7nm technology with the tightest contacted poly pitch (CPP) of 44/48nm and metallization pitch of 36nm ever reported in FinFET technology. To overcome optical lithography limits, Extreme Ultraviolet Lithography (EUV) has been introduced for multiple critical levels for the first time. Dual strained channels have been also implemented to enhance mobility for high performance applications.

Date

31 Jan 2017

Publication

IEDM 2016

Authors

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