FinFET performance with Si:P and Ge:Group-III-Metal metastable contact trench alloys

We achieved mid-10-10 Ω-cm2 n-type S/D contact resistivity (npc) and 1.9×10-9 Ω-cm2 p-type S/D contact resistivity (ppc) by employing laser-induced liquid or solid phase epitaxy (LPE/SPE) of Si