A Systematic Study of Temperature, Polarity, Thickness, and Ramp Rate Dependencies of Ramp-Voltage Stress for SiO2 and its Comparison with 2D Gate Dielectrics
- Ernest Y. Wu
- Richard G. Southwick
- et al.
- 2025
- IRPS 2025
Publications
48 results for Richard G. Southwick
A systematic study of temperature, polarity, thickness, and ramp rate dependencies of ramp-voltage stress for SiO2 and its comparison with 2D gate dielectrics
- Ernest Y Wu
- Richard G. Southwick
- et al.
- 2025
- IRPS 2025
Frequency-Modulated Charge Pumping: Defect Measurements With High Gate Leakage
- Jason Thomas Ryan
- Richard G. Southwick
- et al.
- 2024
- IEEE Electron Device Letters
Yield Methodology and Heater Process Variation in Phase Change Memory (PCM) Technology for Analog Computing
- Victor Chan
- A. Gasasira
- et al.
- 2023
- IEEE Trans Semicond Manuf
Hardware Based Performance Assessment of Vertical-Transport Nanosheet Technology
- Gen Tsutsui
- Seunghyun Song
- et al.
- 2022
- IEDM 2022
First Experimental Demonstration of MRAM Data Scrubbing: 80 Mb MRAM with 40 nm junctions for Last Level Cache Applications
- H. Wu
- V. Katragadda
- et al.
- 2021
- IEDM 2021
TDDB Reliability in Gate-All-Around Nanosheet
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2021
- IRPS 2021
Analysis of Sheet Dimension (W, L) Dependence of NBTI in GAA-SNS FETs
- Nilotpal Choudhury
- Tarun Samadder
- et al.
- 2021
- IRPS 2021
A 14 nm embedded STT-MRAM CMOS technology
- Daniel C. Edelstein
- M. Rizzolo
- et al.
- 2020
- IEDM 2020
Multiphonon-electron coupling enhanced defect generation and breakdown mechanism in MOL new spacer dielectrics for 7nm/5nm technology nodes and beyond
- Ernest Wu
- Richard G. Southwick
- et al.
- 2020
- IEDM 2020