A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- Ruilong Xie
- Pietro Montanini
- et al.
- 2016
- IEDM 2016
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28 results for Daniel Corliss
High performance 45-nm SOI technology with enhanced strain, porous low-k BEOL, and immersion lithography
- S. Narasimha
- K. Onishi
- et al.
- 2006
- IEDM 2006
Electrical validation of the integration of 193i and DSA for sub-20nm metal cut patterning
- Chi Chun Liu
- Richard Farrell
- et al.
- 2019
- MEMS/NEMS/MOEMS 2019
LCDU improvement of EUV-patterned vias with DSA
- Jing Guo
- Dustin W. Janes
- et al.
- 2019
- MEMS/NEMS/MOEMS 2019
EUV mask challenges and requirements for ultimate single exposure interconnects
- Chris Progler
- Michael Green
- et al.
- 2019
- SPIE Advanced Lithography 2019
Polymer brush as adhesion promoter for EUV patterning
- Jing Guo
- Anuja De Silva
- et al.
- 2018
- SPIE Advanced Lithography 2018
Characterization and control of EUV scanner dose uniformity and stability
- Chris Robinson
- Daniel Corliss
- et al.
- 2018
- SPIE Advanced Lithography 2018
The integration of 193i and DSA for BEOL metal cuts/blocks targeting sub-20nm tip-to-tip CD
- Chi-Chun Liu
- Yann Mignot
- et al.
- 2018
- SPIE Advanced Lithography 2018
Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET
- N. Loubet
- T.B. Hook
- et al.
- 2017
- VLSI Technology 2017
DSA patterning options for logics and memory applications
- Chi Chun Liu
- Elliott Franke
- et al.
- 2017
- SPIE Advanced Lithography 2017