Publications

This is our catalog of recent publications authored by IBM researchers, in collaboration with the global research community. We’re currently adding our back catalog of more than 110,000 publications. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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Year

28 results for Terence B. Hook

Accurate performance evaluation for the horizontal nanosheet standard-cell design space beyond 7nm technology
- - Yoo-Mi Lee
  - Myung-Hee Na
  - et al.
- 2017
- IEDM 2017
Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT
- - G. Tsutsui
  - Ruqiang Bao
  - et al.
- 2016
- IEDM 2016
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- - Ruilong Xie
  - Pietro Montanini
  - et al.
- 2016
- IEDM 2016
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
- - Dechao Guo
  - G. Karve
  - et al.
- 2016
- VLSI Technology 2016
A novel ALD SiBCN low-k spacer for parasitic capacitance reduction in FinFETs
- - Tenko Yamashita
  - S. Mehta
  - et al.
- 2015
- VLSI Technology 2015
Evaluation of 10-nm Bulk FinFET RF Performance - Conventional Versus NC-FinFET
- - R. Singh
  - K. Aditya
  - et al.
- 2018
- IEEE Electron Device Letters
Impact of Line and Via Resistance on Device Performance at the 5nm Gate All Around Node and beyond
- - N. Lanzillo
  - Koichi Motoyama
  - et al.
- 2018
- IITC 2018
Advanced FDSOI design: The U-channel device for 7nm node and beyond
- - R. Muralidhar
  - Robert Dennard
  - et al.
- 2017
- S3S 2017
Analysis of systematic and random variation of gate-induced drain leakage in silicon-germanium channel pFET
- - Vishal A. Tiwari
  - Ch. L. N. Pavan
  - et al.
- 2016
- ICEE 2016
Comparison of heat outflow in dense sub-14nm contemporary NFETs: Bulk/SOI, inserted-oxide FinFET and nanowire FET
- - Ishita Jain
  - Anshul Gupta
  - et al.
- 2016
- ICEE 2016