Publications

74 results for Vamsi Paruchuri

Understanding the interfacial layer formation on strained Si_1-xGe_x channels and their correlation to inversion layer hole mobility
- - Choonghyun Lee
  - Richard G. Southwick
  - et al.
- 2017
- VLSI Technology 2017
Comparison of key fine-line BEOL metallization schemes for beyond 7 nm node
- - Takeshi Nogami
  - X. Zhang
  - et al.
- 2017
- VLSI Technology 2017
Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET
- - N. Loubet
  - T.B. Hook
  - et al.
- 2017
- VLSI Technology 2017
Reliable airgap BEOL technology in advanced 48 nm pitch copper/ULK interconnects for substantial power and performance benefits
- - C. J. Penny
  - S. Gates
  - et al.
- 2017
- IITC 2017
Cobalt/copper composite interconnects for line resistance reduction in both fine and wide lines
- - Takeshi Nogami
  - Raghuveer Patlolla
  - et al.
- 2017
- IITC 2017
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- - Ruilong Xie
  - Pietro Montanini
  - et al.
- 2016
- IEDM 2016
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
- - Dechao Guo
  - G. Karve
  - et al.
- 2016
- VLSI Technology 2016
Selective GeO_x-scavenging from interfacial layer on Si_1-xGe_x channel for high mobility Si/Si_1-xGe_x CMOS application
- - Choonghyun Lee
  - H. Kim
  - et al.
- 2016
- VLSI Technology 2016
Ultrathin conformal multilayer SiNO dielectric cap for capacitance reduction in Cu/low k interconnects
- - Deepika Priyadarshini
  - Son Van Nguyen
  - et al.
- 2016
- IITC/AMC 2016
BEOL process integration for the 7 nm technology node
- - T. Standaert
  - Genevieve Beique
  - et al.
- 2016
- IITC/AMC 2016