Understanding the interfacial layer formation on strained Si1-xGex channels and their correlation to inversion layer hole mobility
- Choonghyun Lee
- Richard G. Southwick
- et al.
- 2017
- VLSI Technology 2017
Publications
This is our catalog of recent publications authored by IBM researchers, in collaboration with the global research community. We’re currently adding our back catalog of more than 110,000 publications. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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Year
12 results for V. Paruchuri
Comparison of key fine-line BEOL metallization schemes for beyond 7 nm node
- T. Nogami
- X. Zhang
- et al.
- 2017
- VLSI Technology 2017
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- Ruilong Xie
- Pietro Montanini
- et al.
- 2016
- IEDM 2016
Selective GeOx-scavenging from interfacial layer on Si1-xGex channel for high mobility Si/Si1-xGex CMOS application
- Choonghyun Lee
- H. Kim
- et al.
- 2016
- VLSI Technology 2016
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
- Dechao Guo
- G. Karve
- et al.
- 2016
- VLSI Technology 2016
Through-Cobalt Self Forming Barrier (tCoSFB) for Cu/ULK BEOL: A novel concept for advanced technology nodes
- T. Nogami
- Benjamin D. Briggs
- et al.
- 2015
- IEDM 2015
Reliable airgap BEOL technology in advanced 48 nm pitch copper/ULK interconnects for substantial power and performance benefits
- C. J. Penny
- S. Gates
- et al.
- 2017
- IITC 2017
Cobalt/copper composite interconnects for line resistance reduction in both fine and wide lines
- T. Nogami
- R. Patlolla
- et al.
- 2017
- IITC 2017
BEOL process integration for the 7 nm technology node
- T. Standaert
- Genevieve Beique
- et al.
- 2016
- IITC/AMC 2016
Ultrathin conformal multilayer SiNO dielectric cap for capacitance reduction in Cu/low k interconnects
- D. Priyadarshini
- Son Van Nguyen
- et al.
- 2016
- IITC/AMC 2016