Publications

This is our catalog of recent publications authored by IBM researchers, in collaboration with the global research community. We’re currently adding our back catalog of more than 110,000 publications. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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13 results for Choonghyun Lee

Channel Strain Dependence of Tinv in Strained Si and Si_l-xGe_xFETs: Internal Strain-induced Modification of Chemical Oxidation
- - Choonghyun Lee
  - S. Mochizuki
  - et al.
- 2019
- VLSI Technology 2019
SiGe Channel CMOS: Understanding Dielectric Breakdown and Bias Temperature Instability Tradeoffs
- - Richard G. Southwick
  - Miaomiao Wang
  - et al.
- 2019
- VLSI Technology 2019
Toward High Performance SiGe Channel CMOS: Design of High Electron Mobility in SiGe nFinFETs Outperforming Si
- - Choonghyun Lee
  - Richard G. Southwick
  - et al.
- 2018
- IEDM 2018
Differentiated performance and reliability enabled by multi-work function solution in RMG Silicon and SiGe MOSFETs
- - Ruqiang Bao
  - Richard G. Southwick
  - et al.
- 2018
- VLSI Technology 2018
High performance and reliable strained SiGe PMOS FinFETs enabled by advanced gate stack engineering
- - Pouya Hashemi
  - Takashi Ando
  - et al.
- 2017
- IEDM 2017
A comparative study of strain and Ge content in Si_1-xGe_x channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETs
- - Choonghyun Lee
  - S. Mochizuki
  - et al.
- 2017
- IEDM 2017
High performance and record subthreshold swing demonstration in scaled RMG SiGe FinFETs with high-Ge-content channels formed by 3D condensation and a novel gate stack process
- - Pouya Hashemi
  - Takashi Ando
  - et al.
- 2017
- VLSI Technology 2017
Understanding the interfacial layer formation on strained Si_1-xGe_x channels and their correlation to inversion layer hole mobility
- - Choonghyun Lee
  - Richard G. Southwick
  - et al.
- 2017
- VLSI Technology 2017
Engineering the electronic defect bands at the Si_1-xGe_x/IL interface: Approaching the intrinsic carrier transport in compressively-strained Si_1-xGe_x pFETs
- - Choonghyun Lee
  - Richard G. Southwick
  - et al.
- 2016
- IEDM 2016
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- - Ruilong Xie
  - Pietro Montanini
  - et al.
- 2016
- IEDM 2016