Channel Strain Dependence of Tinv in Strained Si and Sil-xGexFETs: Internal Strain-induced Modification of Chemical Oxidation
- 2019
- VLSI Technology 2019
Publications
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13 results for Choonghyun Lee
SiGe Channel CMOS: Understanding Dielectric Breakdown and Bias Temperature Instability Tradeoffs
- 2019
- VLSI Technology 2019
Toward High Performance SiGe Channel CMOS: Design of High Electron Mobility in SiGe nFinFETs Outperforming Si
- 2018
- IEDM 2018
Differentiated performance and reliability enabled by multi-work function solution in RMG Silicon and SiGe MOSFETs
- 2018
- VLSI Technology 2018
High performance and reliable strained SiGe PMOS FinFETs enabled by advanced gate stack engineering
- 2017
- IEDM 2017
A comparative study of strain and Ge content in Si1-xGex channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETs
- 2017
- IEDM 2017
High performance and record subthreshold swing demonstration in scaled RMG SiGe FinFETs with high-Ge-content channels formed by 3D condensation and a novel gate stack process
- 2017
- VLSI Technology 2017
Understanding the interfacial layer formation on strained Si1-xGex channels and their correlation to inversion layer hole mobility
- 2017
- VLSI Technology 2017
Engineering the electronic defect bands at the Si1-xGex/IL interface: Approaching the intrinsic carrier transport in compressively-strained Si1-xGex pFETs
- 2016
- IEDM 2016
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- 2016
- IEDM 2016