Publication
VLSI Technology 2016
Conference paper

FINFET technology featuring high mobility SiGe channel for 10nm and beyond

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Abstract

SiGe for channel material has been explored as a major technology element after the introduction of FINFET into CMOS technology [1-4]. Research on long channel FETs and discrete short channel FETs demonstrated benefits in mobility [1-4] and reliability [2]. Given the disruption that SiGe FIN brings, every aspect associated with SiGe FIN needs to be carefully studied towards technology insertion. In this paper, we report the latest SiGe-based FINFET CMOS technology development. CMOS FINFETs with Si-FIN nFET and SiGe-FIN pFET is demonstrated as a viable technology solution for both server and mobile applications at 10nm node and beyond.

Date

21 Sep 2016

Publication

VLSI Technology 2016

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