Nelson Felix

Publications

• Evaluation of (110) versus (001) Channel Orientation for Improved nFET/pFET Device Performance Trade-Off in Gate-All-Around Nanosheet Technology

  • • Shogo Mochizuki
    • Nicolas Loubet
    • et al.
  • 2023
  • IEDM 2023

• Scaling opportunities for Gate-All-Around and beyond: A patterning perspective

  • • Indira Seshadri
    • Eric Miller
    • et al.
  • 2023
  • IEDM 2023

• Epi Source-Drain Damage Mitigation During Channel Release of Stacked Nanosheet Gate-All-Around Transistors

  • • Curtis Durfee
    • Ivo Otto
    • et al.
  • 2023
  • ECS Meeting 2023

• Epi Source/Drain Damage Mitigation with Inner Spacer and Buffer Optimization in Stacked Nanosheet Gate-All-Around Transistors

  • • Curtis Durfee
    • Ivo Otto
    • et al.
  • 2023
  • SSDM 2023

• Advanced BEOL Materials, Processes, and Integration to Reduce Line Resistance of Damascene Cu, Co, and Subtractive Ru Interconnects

  • • Takeshi Nogami
    • Oleg Gluschenkov
    • et al.
  • 2022
  • VLSI Technology and Circuits 2022

• Etch and Patterning Development for 2nm Node Nanosheet Devices

  • • Eric Miller
    • Indira Seshadri
    • et al.
  • 2022
  • SPIE Advanced Lithography 2022

• Review of nanosheet metrology opportunities for technology readiness

  • • Mary A. Breton
    • Daniel Schmidt
    • et al.
  • 2022
  • JM3

• EUV single exposure via patterning at aggressive pitch

  • • Jing Guo
    • Jennifer Church
    • et al.
  • 2021
  • SPIE Advanced Lithography 2021

• Nanosheet Metrology Opportunities for Technology Readiness

  • • Mary Breton
    • Daniel Schmidt
    • et al.
  • 2021
  • SPIE Advanced Lithography 2021

• Fundamental characterization of stochastic variation for improved single-expose extreme ultraviolet patterning at aggressive pitch

  • • Jennifer Church
    • Luciana Meli
    • et al.
  • 2020
  • J. Micro/Nanolithogr. MEMS MOEMS