Publication
IEDM 2023
Conference paper

Evaluation of (110) versus (001) Channel Orientation for Improved nFET/pFET Device Performance Trade-Off in Gate-All-Around Nanosheet Technology

Abstract

Stacked gate-all-around nanosheet (NS) pFET and nFET transistors have been fabricated on (110) and (001) substrates to determine the device performance dependence on Si channel orientation for short and long- channel NS devices.