Publication
IEDM 2017
Conference paper

Key parameters affecting STT-MRAM switching efficiency and improved device performance of 400°C-compatible p-MTJs

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Abstract

We report the impact of four key parameters on switching efficiency of STT-MRAM devices with perpendicular magnetic anisotropy: device size, device resistance-area product (RA), blanket film Gilbert damping constant (a), and process temperature. Performance degradation observed in 400°C-processed devices was eliminated by optimizing the perpendicular magnetic tunnel junction (p-MTJ) materials. Furthermore, 400°C-compatible double MTJs were developed for the first time and showed 1.5x improvement in switching efficiency compared to single MTJs with identical free layers.

Date

23 Jan 2018

Publication

IEDM 2017

Authors

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