Key parameters affecting STT-MRAM switching efficiency and improved device performance of 400°C-compatible p-MTJs
- Guohan Hu
- M. G. Gottwald
- et al.
- 2017
- IEDM 2017
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6 results for J.H. Park
STT-MRAM with double magnetic tunnel junctions
- Guohan Hu
- J.H. Lee
- et al.
- 2015
- IEDM 2015
Low-current spin transfer torque MRAM
- Guohan Hu
- J. J. Nowak
- et al.
- 2017
- VLSI-TSA 2017
Low-current Spin Transfer Torque MRAM
- Guohan Hu
- J. J. Nowak
- et al.
- 2017
- VLSI-DAT 2017
Low-current spin transfer torque MRAM
- D.C. Worledge
- A. Annunziata
- et al.
- 2015
- INTERMAG 2015
Dependence of Voltage and Size on Write Error Rates in Spin-Transfer Torque Magnetic Random-Access Memory
- J. J. Nowak
- Raphael P. Robertazzi
- et al.
- 2016
- IEEE Magnetics Letters