Easy-plane dominant stochastic magnetic tunnel junction with synthetic antiferromagnetic layers
- Jonathan Z. Sun
- Christopher Safranski
- et al.
- 2023
- Physical Review B
Paper
Publications
64 results for Philip Trouilloud
Stochastic magnetic tunnel junction with easy-plane dominant anisotropy
- Jonathan Z. Sun
- Christopher Safranski
- et al.
- 2023
- Physical Review B
PaperDouble spin-torque magnetic tunnel junction devices for last-level cache applications
- G. Hu
- C. Safranski
- et al.
- 2022
- IEDM 2022
Conference paperSTT-MRAM - Status and Outlook
- Daniel C. Worledge
- C. Safranski
- et al.
- 2022
- TMRC 2022
Conference paperReliable Sub-nanosecond MRAM with Double Spin-torque Magnetic Tunnel Junctions
- C. Safranski
- G. Hu
- et al.
- 2022
- VLSI Technology and Circuits 2022
Conference paperReliable Sub-Nanosecond Switching in Magnetic Tunnel Junctions for MRAM Applications
- Christopher Safranski
- Guohan Hu
- et al.
- 2021
- IEEE T-ED
PaperDemonstration of Nanosecond Operation in Stochastic Magnetic Tunnel Junctions
- Christopher Safranski
- Jan Kaiser
- et al.
- 2021
- Nano Letters
PaperDemonstration of narrow switching distributions in STT-MRAM arrays for LLC applications at 1x nm node
- E. R.J. Edwards
- Guohan Hu
- et al.
- 2020
- IEDM 2020
Conference paperSpin-transfer torque MRAM with reliable 2 ns writing for last level cache applications
- Guohan Hu
- D. Kim
- et al.
- 2019
- IEDM 2019
Conference paperBias dependent conductance in CoFeB-MgO-CoFeB magnetic tunnel junctions as an indicator for electrode magnetic condition at barrier interfaces
- Jonathan Z. Sun
- Philip Trouilloud
- et al.
- 2019
- AIP Advances
Paper