First Experimental Demonstration of MRAM Data Scrubbing: 80 Mb MRAM with 40 nm junctions for Last Level Cache ApplicationsH. WuV. Katragaddaet al.2021IEDM 2021
Key parameters affecting STT-MRAM switching efficiency and improved device performance of 400°C-compatible p-MTJsGuohan HuM. G. Gottwaldet al.2017IEDM 2017