Publications

This is our catalog of recent publications authored by IBM researchers, in collaboration with the global research community. We’re currently adding our back catalog of more than 110,000 publications. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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Year

15 results at IEDM 2017

High performance and reliable strained SiGe PMOS FinFETs enabled by advanced gate stack engineering
- - Pouya Hashemi
  - Takashi Ando
  - et al.
- 2017
- IEDM 2017
A comparative study of strain and Ge content in Si_1-xGe_x channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETs
- - Choonghyun Lee
  - S. Mochizuki
  - et al.
- 2017
- IEDM 2017
Key parameters affecting STT-MRAM switching efficiency and improved device performance of 400°C-compatible p-MTJs
- - Guohan Hu
  - M. G. Gottwald
  - et al.
- 2017
- IEDM 2017
Towards cube-sized compute nodes: Advanced packaging concepts enabling extreme 3D integration
- - Thomas Brunschwiler
  - Gerd Schlottig
  - et al.
- 2017
- IEDM 2017
A physics-based investigation of Pt-salt doped carbon nanotubes for local interconnects
- - Jie Liang
  - Raphael Ramos
  - et al.
- 2017
- IEDM 2017
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
- - Herwig Hahn
  - Veeresh Deshpande
  - et al.
- 2017
- IEDM 2017
Integrated dual SPE processes with low contact resistivity for future CMOS technologies
- - Heng Wu
  - Soon-Cheon Seo
  - et al.
- 2017
- IEDM 2017
Modeling of NBTI time kinetics and T dependence of VAF in SiGe p-FinFETs
- - Narendra Parihar
  - Richard G. Southwick
  - et al.
- 2017
- IEDM 2017
Accurate performance evaluation for the horizontal nanosheet standard-cell design space beyond 7nm technology
- - Yoo-Mi Lee
  - Myung-Hee Na
  - et al.
- 2017
- IEDM 2017
20 Years of Cu BEOL in manufacturing, and its future prospects
- - D. Edelstein
- 2017
- IEDM 2017