Double spin-torque magnetic tunnel junction devices for last-level cache applications
- G. Hu
- C. Safranski
- et al.
- 2022
- IEDM 2022
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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157 results for Jonathan Z. Sun
Spin-transfer torque MRAM with reliable 2 ns writing for last level cache applications
- Guohan Hu
- D. Kim
- et al.
- 2019
- IEDM 2019
Key parameters affecting STT-MRAM switching efficiency and improved device performance of 400°C-compatible p-MTJs
- Guohan Hu
- M. G. Gottwald
- et al.
- 2017
- IEDM 2017
STT-MRAM with double magnetic tunnel junctions
- Guohan Hu
- J.H. Lee
- et al.
- 2015
- IEDM 2015
Switching distributions and write reliability of perpendicular spin torque MRAM
- D.C. Worledge
- G. Hu
- et al.
- 2010
- IEDM 2010
A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)
- R. Beach
- T. Min
- et al.
- 2008
- IEDM 2008
Spin Hall effect tunnelling spectroscopy
- Luqiao Liu
- Ching-Tzu Chen
- et al.
- 2014
- Nature Physics
Resonance measurement of nonlocal spin torque in a three-terminal magnetic device
- Lin Xue
- Chen Wang
- et al.
- 2012
- Physical Review Letters
Forced entanglement vs anisotropic dissipation in a vortex line liquid
- D. López
- L. Krusin-Elbaum
- et al.
- 1997
- Physical Review Letters
Planar Hall Driven Torque in a Ferromagnet/Nonmagnet/Ferromagnet System
- Christopher Safranski
- Jonathan Z. Sun
- et al.
- 2020
- Physical Review Letters