Materials engineering for phase change random access memory
Simone Raoux, Huai-Yu Cheng, et al.
NVMTS 2011
Memory technologies with higher density, higher bandwidth, lower power consumption, higher speed, and lower cost are in high demand in the current big data era. In this paper, recent progress of emerging non-volatile memories is reviewed. The current status, challenges, and opportunities of emerging non-volatile memories, such as phase-change memory, resistive random-access memory, ferroelectric field-effect transistors, and magnetic random-access memory, are discussed toward storage-class memory, embedded non-volatile memories, and near/in-memory computing applications. Graphic abstract: [Figure not available: see fulltext.]
Simone Raoux, Huai-Yu Cheng, et al.
NVMTS 2011
Simone Raoux, Anja K. König, et al.
physica status solidi (b)
W. Chien, C. Yeh, et al.
IEEE T-ED
Huai-Yu Cheng, A. Grun, et al.
IEDM 2022