Device Study on OTS-PCM for Persistent Memory Application : IBM/Macronix Phase Change Memory Joint Project

Abstract

We present a trap limited model on OTS-PCM devices with the thickness effect to depict the conduction behavior. The forming process is well explained by using the effective thickness concept. Moreover, the dependence between leakage current and sub-threshold slope resulting in high density cross-point OTS-PCM application is discussed, and the successful readout from a 1Mb cross-point PCM ADM using half-v scheme is demonstrated accordingly.