New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low VthDrift at 85 °C and High Endurance 3D Crosspoint Memory : IBM/Macronix PCRAM Joint ProjectHuai-Yu ChengA. Grunet al.2022IEDM 2022
An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCMHuai-Yu ChengW. Chienet al.2017IEDM 2017
A novel inspection and annealing procedure to rejuvenate phase change memory from cycling-induced degradations for storage class memory applicationsWin-San KhwaJau-Yi Wuet al.2014IEDM 2014
A high performance phase change memory with fast switching speed and high temperature retention by engineering the Ge xSb yTe z phase change materialH.Y. ChengT.H. Hsuet al.2011IEDM 2011
A low power phase change memory using thermally confined TaN/TiN bottom electrodeJ.Y. WuMatthew Breitwischet al.2011IEDM 2011
The impact of hole-induced electromigration on the cycling endurance of phase change memoryM. H. LeeR. Cheeket al.2010IEDM 2010
Understanding amorphous states of phase-change memory using frenkel-poole modelY.H. ShihM.H. Leeet al.2009IEDM 2009
Mechanisms of retention loss in Ge2Sb2Te 5-based phase-change memoryY.H. ShihJ.Y. Wuet al.2008IEDM 2008
A Comprehensive Study on the Pillar Size of OTS-PCM Memory with an Optimized Process and Scaling Trends Down to Sub-10 nm for SCM ApplicationsW. ChienE. Laiet al.2023IMW 2023
Endurance Evaluation on OTS-PCM Device using Constant Current Stress SchemeW. ChienLynne Gignacet al.2022IRPS 2022