New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low VthDrift at 85 °C and High Endurance 3D Crosspoint Memory : IBM/Macronix PCRAM Joint Project
- Huai-Yu Cheng
- A. Grun
- et al.
- 2022
- IEDM 2022
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140 results for Lynne Gignac
Mechanisms of Electromigration Damage in Cu Interconnects
- C. K. Hu
- Lynne Gignac
- et al.
- 2018
- IEDM 2018
High-Q magnetic inductors for high efficiency on-chip power conversion
- Naigang Wang
- Bruce Doris
- et al.
- 2016
- IEDM 2016
Electrical characterization of FinFETs with fins formed by directed self assembly at 29 nm fin pitch using a self-aligned fin customization scheme
- Hsinyu Tsai
- Hiroyuki Miyazoe
- et al.
- 2014
- IEDM 2014
200 mm wafer-scale integration of sub-20 nm sacrificial nanofluidic channels for manipulating and imaging single DNA molecules
- C. Wang
- S.W. Nam
- et al.
- 2013
- IEDM 2013
Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond
- Sarunya Bangsaruntip
- K. Balakrishnan
- et al.
- 2013
- IEDM 2013
Materials and scaling effects on on-chip interconnect reliability
- C.-K. Hu
- E. Liniger
- et al.
- 2013
- MRS Spring Meeting 2013
Room-temperature carrier transport in high-performance short-channel Silicon nanowire MOSFETs
- Amlan Majumdar
- Sarunya Bangsaruntip
- et al.
- 2012
- IEDM 2012
Sub-10 nm carbon nanotube transistor
- Aaron D. Franklin
- Shu-Jen Han
- et al.
- 2011
- IEDM 2011
High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling
- S. Bangsaruntip
- G.M. Cohen
- et al.
- 2009
- IEDM 2009