State-Independent Low Resistance Drift SiSbTe Phase Change Memory for Analog In-Memory Computing Applications
- Michelle Cheng
- Zhi-Lun Liu
- et al.
- 2024
- VLSI Technology and Circuits 2024
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75 results for Matthew BrightSky
In-Memory Compute Chips with Carbon-based Projected Phase-Change Memory Devices
- G.S. Syed
- K. Brew
- et al.
- 2023
- IEDM 2023
New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low Vth Drift at 85oC and High Endurance 3D Crosspoint Memory
- Michelle Cheng
- Alexander Grun
- et al.
- 2022
- IEDM 2022
New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low VthDrift at 85 °C and High Endurance 3D Crosspoint Memory : IBM/Macronix PCRAM Joint Project
- Huai-Yu Cheng
- A. Grun
- et al.
- 2022
- IEDM 2022
Temperature sensitivity of analog in-memory computing using phase-change memory
- Irem Boybat-Kara
- Benedikt Kersting
- et al.
- 2021
- IEDM 2021
Optimizing AsSeGe Chalcogenides by Dopants for Extremely Low IOFF, High Endurance and Low Vth Drift 3D Crosspoint Memory
- Huai-Yu Cheng
- Wei-Chih Chien
- et al.
- 2021
- IEDM 2021
Precision of synaptic weights programmed in phase-change memory devices for deep learning inference
- S. R. Nandakumar
- Irem Boybat
- et al.
- 2020
- IEDM 2020
On-Chip Trainable 1.4M 6T2R PCM Synaptic Array with 1.6K Stochastic LIF Neurons for Spiking RBM
- Masatoshi Ishii
- U. Shin
- et al.
- 2019
- IEDM 2019
An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM
- Huai-Yu Cheng
- W. Chien
- et al.
- 2017
- IEDM 2017
ALD-based confined PCM with a metallic liner toward unlimited endurance
- Wanki Kim
- Matthew BrightSky
- et al.
- 2016
- IEDM 2016