Endurance Evaluation on OTS-PCM Device using Constant Current Stress Scheme

Abstract

A constant current stress scheme is implemented for endurance study on OTS-PCM devices for the first time. It provides a feasible method to estimate the read/write endurance for cross-point PCM products, which can save testing time for chips qualification. A 256kb chip with 1E7 cycles is demonstrated that corresponds with the endurance evaluation on the doped AsGeSe OTS with doped Ge2Sb2Te5 system.