Advanced Arsenic Doped Epitaxial Growth for Source Drain Extension Formation in Scaled FinFET Devices
- Shogo Mochizuki
- B. Colombeau
- et al.
- 2018
- IEDM 2018
Publications
57 results for Nicolas Loubet
Channel Geometry Impact and Narrow Sheet Effect of Stacked Nanosheet
- Chun Wing Yeung
- Jingyun Zhang
- et al.
- 2018
- IEDM 2018
Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology
- S. Reboh
- R. Coquand
- et al.
- 2018
- Applied Physics Letters
Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET
- N. Loubet
- T.B. Hook
- et al.
- 2017
- VLSI Technology 2017
Highly-selective superconformai CVD Ti silicide process enabling area-enhanced contacts for next-generation CMOS architectures
- Nicolas Breil
- A. Carr
- et al.
- 2017
- VLSI Technology 2017
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- Ruilong Xie
- Pietro Montanini
- et al.
- 2016
- IEDM 2016
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
- Dechao Guo
- G. Karve
- et al.
- 2016
- VLSI Technology 2016
Advanced in-line optical metrology of sub-10nm structures for gate all around devices (GAA)
- R. Muthinti
- Nicolas Loubet
- et al.
- 2016
- SPIE Advanced Lithography 2016
Impact of source/drain silicon cap on FDSOI SiGe pMOSFET performance
- E. Augendre
- S. Maitrejean
- et al.
- 2015
- S3S 2015
Si nanowire CMOS fabricated with minimal deviation from RMG FinFET technology showing record performance
- Isaac Lauer
- Nicolas Loubet
- et al.
- 2015
- VLSI Technology 2015