Development of Epitaxial SiGeB as a Test Vehicle to Evaluate Source-Drain Etchout during Channel Release of Gate-all-Around Devices: Topic/category: AEPM: Advanced Equipment Processes and Materials
- M. Nasseri
- C. Durfee
- et al.
- 2024
- ASMC 2024
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56 results for Nicolas Loubet
Evaluation of (110) versus (001) Channel Orientation for Improved nFET/pFET Device Performance Trade-Off in Gate-All-Around Nanosheet Technology
- Shogo Mochizuki
- Nicolas Loubet
- et al.
- 2023
- IEDM 2023
Epi Source-Drain Damage Mitigation During Channel Release of Stacked Nanosheet Gate-All-Around Transistors
- Curtis Durfee
- Ivo Otto
- et al.
- 2023
- ECS Meeting 2023
Epi Source/Drain Damage Mitigation with Inner Spacer and Buffer Optimization in Stacked Nanosheet Gate-All-Around Transistors
- Curtis Durfee
- Ivo Otto
- et al.
- 2023
- SSDM 2023
Contact Cavity Shaping and Selective SiGe:B Low-Temperature Epitaxy Process Solution for sub 10-9 Ω.cm2 Contact Resistivity in Nonplanar FETs
- N. Breil
- B.-C. Lee
- et al.
- 2023
- VLSI Technology 2023
Impact of Gate Stack Thermal Budget on NBTI Reliability in Gate-All-Around Nanosheet P-type Devices
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2023
- IRPS 2023
Precession Electron Diffraction (PED) Strain Characterization in Stacked Nanosheet FET Structure
- Juntao Li
- Shogo Mochizuki
- et al.
- 2022
- ISTFA 2022
In-line Raman spectroscopy for gate-all-around nanosheet device manufacturing
- Daniel Schmidt
- Curtis Durfee
- et al.
- 2022
- JM3
Gate-Last IO Transistors based on Stacked Gate-All-Around Nanosheet Architecture for Advanced Logic Technologies
- M. Bhuiyan
- M. Kim
- et al.
- 2021
- IEDM 2021
Highly Selective SiGe Dry Etch Process for the Enablement of Stacked Nanosheet Gate-All-Around Transistors
- Curtis Durfee
- Subhadeep Kal
- et al.
- 2021
- ECS Meeting 2021