Gate-Last IO Transistors based on Stacked Gate-All-Around Nanosheet Architecture for Advanced Logic Technologies
- 2021
- IEDM 2021
Publications
This is our catalog of recent publications authored by IBM researchers, in collaboration with the global research community. We’re currently adding our back catalog of more than 110,000 publications. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
27 results for N. Loubet
Enabling Next Generation CMOS by Novel EOT Scaling Module
- 2021
- VLSI Technology 2021
Stacked Gate-All-Around Nanosheet pFET with Highly Compressive Strained Si1-xGex Channel
- 2020
- IEDM 2020
Composite Interconnects for High-Performance Computing beyond the 7nm Node
- 2020
- VLSI Technology 2020
Structural and Electrical Demonstration of SiGe Cladded Channel for PMOS Stacked Nanosheet Gate-All-Around Devices
- 2020
- VLSI Technology 2020
Selective Enablement of Dual Dipoles for near Bandedge Multi-Vt Solution in High Performance FinFET and Nanosheet Technologies
- 2020
- VLSI Technology 2020
Improved Air Spacer Co-Integrated with Self-Aligned Contact (SAC) and Contact over Active Gate (COAG) for Highly Scaled CMOS Technology
- 2020
- VLSI Technology 2020
Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications
- 2019
- IEDM 2019
Imaging, Modeling and Engineering of Strain in Gate-All-Around Nanosheet Transitors
- 2019
- IEDM 2019
A Novel Dry Selective Etch of SiGe for the Enablement of High Performance Logic Stacked Gate-All-Around NanoSheet Devices
- 2019
- IEDM 2019