Channel Material and Inner Spacer Impact on Gate Stack TDDB of Gate-All-Around Nanosheet Transistors
- Huimei Zhou
- Shogo Mochizuki
- et al.
- 2026
- IRPS 2026
Conference paper
Publications
59 results for Nicolas Loubet
Evaluation of In-line SIMS Impact on Device Reliability and Performance
- Jander Cruz
- Li Xiang
- et al.
- 2026
- SPIE Advanced Lithography + Patterning 2026
Conference paperCompressive Diffusion Break Stressor for Gate-All-Around Nanosheet pFET Transistor Performance Improvement
- S. Hung
- S. Mochizuki
- et al.
- 2025
- VLSI Technology and Circuits 2025
Conference paperDevelopment of Epitaxial SiGeB as a Test Vehicle to Evaluate Source-Drain Etchout during Channel Release of Gate-all-Around Devices: Topic/category: AEPM: Advanced Equipment Processes and Materials
- M. Nasseri
- C. Durfee
- et al.
- 2024
- ASMC 2024
Conference paperEvaluation of (110) versus (001) Channel Orientation for Improved nFET/pFET Device Performance Trade-Off in Gate-All-Around Nanosheet Technology
- Shogo Mochizuki
- Nicolas Loubet
- et al.
- 2023
- IEDM 2023
Conference paperEpi Source-Drain Damage Mitigation During Channel Release of Stacked Nanosheet Gate-All-Around Transistors
- Curtis Durfee
- Ivo Otto
- et al.
- 2023
- ECS Meeting 2023
Conference paperEpi Source/Drain Damage Mitigation with Inner Spacer and Buffer Optimization in Stacked Nanosheet Gate-All-Around Transistors
- Curtis Durfee
- Ivo Otto
- et al.
- 2023
- SSDM 2023
Conference paperContact Cavity Shaping and Selective SiGe:B Low-Temperature Epitaxy Process Solution for sub 10-9 Ω.cm2 Contact Resistivity in Nonplanar FETs
- N. Breil
- B.-C. Lee
- et al.
- 2023
- VLSI Technology 2023
Conference paperImpact of Gate Stack Thermal Budget on NBTI Reliability in Gate-All-Around Nanosheet P-type Devices
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2023
- IRPS 2023
Conference paperPrecession Electron Diffraction (PED) Strain Characterization in Stacked Nanosheet FET Structure
- Juntao Li
- Shogo Mochizuki
- et al.
- 2022
- ISTFA 2022
Conference paper