Publications

57 results for Nicolas Loubet

Compressive Diffusion Break Stressor for Gate-All-Around Nanosheet pFET Transistor Performance Improvement
- - Steven Hung
  - Shogo Mochizuki
  - et al.
- 2025
- VLSI Technology and Circuits 2025
Development of Epitaxial SiGeB as a Test Vehicle to Evaluate Source-Drain Etchout during Channel Release of Gate-all-Around Devices: Topic/category: AEPM: Advanced Equipment Processes and Materials
- - M. Nasseri
  - C. Durfee
  - et al.
- 2024
- ASMC 2024
Evaluation of (110) versus (001) Channel Orientation for Improved nFET/pFET Device Performance Trade-Off in Gate-All-Around Nanosheet Technology
- - Shogo Mochizuki
  - Nicolas Loubet
  - et al.
- 2023
- IEDM 2023
Epi Source-Drain Damage Mitigation During Channel Release of Stacked Nanosheet Gate-All-Around Transistors
- - Curtis Durfee
  - Ivo Otto
  - et al.
- 2023
- ECS Meeting 2023
Epi Source/Drain Damage Mitigation with Inner Spacer and Buffer Optimization in Stacked Nanosheet Gate-All-Around Transistors
- - Curtis Durfee
  - Ivo Otto
  - et al.
- 2023
- SSDM 2023
Contact Cavity Shaping and Selective SiGe:B Low-Temperature Epitaxy Process Solution for sub 10^-9 Ω.cm² Contact Resistivity in Nonplanar FETs
- - N. Breil
  - B.-C. Lee
  - et al.
- 2023
- VLSI Technology 2023
Impact of Gate Stack Thermal Budget on NBTI Reliability in Gate-All-Around Nanosheet P-type Devices
- - Huimei Zhou
  - Miaomiao Wang
  - et al.
- 2023
- IRPS 2023
Precession Electron Diffraction (PED) Strain Characterization in Stacked Nanosheet FET Structure
- - Juntao Li
  - Shogo Mochizuki
  - et al.
- 2022
- ISTFA 2022
In-line Raman spectroscopy for gate-all-around nanosheet device manufacturing
- - Daniel Schmidt
  - Curtis Durfee
  - et al.
- 2022
- JM3
Gate-Last IO Transistors based on Stacked Gate-All-Around Nanosheet Architecture for Advanced Logic Technologies
- - M. Bhuiyan
  - M. Kim
  - et al.
- 2021
- IEDM 2021