Ultrafast measurements and physical modeling of NBTI stress and recovery in RMG FinFETs under diverse DC-AC experimental conditions
- Narendra Parihar
- Uma Sharma
- et al.
- 2018
- IEEE T-ED
Publications
60 results for Miaomiao Wang
Hot carrier reliability in ultra-scaled sige channel p-FinFETs
- Miaomiao Wang
- X. Miao
- et al.
- 2017
- ASICON 2017
Comparison of DC and AC NBTI kinetics in RMG Si and SiGe p-FinFETs
- Narendra Parihar
- Richard G. Southwick
- et al.
- 2017
- IRPS 2017
Hot carrier effect in ultra-scaled replacement metal gate Sii-xGex channel p-FinFETs
- Miaomiao Wang
- X. Miao
- et al.
- 2016
- IEDM 2016
Air spacer for 10nm FinFET CMOS and beyond
- K. Cheng
- C. Park
- et al.
- 2016
- IEDM 2016
Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT
- G. Tsutsui
- Ruqiang Bao
- et al.
- 2016
- IEDM 2016
Process optimizations for NBTI/PBTI for future replacement metal gate technologies
- Barry P. Linder
- A. Dasgupta
- et al.
- 2016
- IRPS 2016
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
- Dechao Guo
- G. Karve
- et al.
- 2016
- VLSI Technology 2016
Separation of interface states and electron trapping for hot carrier degradation in ultra-scaled replacement metal gate n-FinFET
- Miaomiao Wang
- Zuoguang Liu
- et al.
- 2015
- IRPS 2015
Reliability challenges for the 10nm node and beyond
- 2014
- IEDM 2014