Comparison of DC and AC NBTI kinetics in RMG Si and SiGe p-FinFETs

Abstract

An ultrafast characterization method is used to study DC and AC NBTI in Si and SiGe channel core RMG p-FinFETs. The time evolution of degradation during and after stress, and the impact of stress bias, temperature, frequency and duty cycle are characterized. A physics-based model is used to qualitatively explain measured data. The similarities and differences of DC and AC NBTI in Si and SiGe channel devices are highlighted.