Publication
IRPS 2017
Conference paper

Comparison of DC and AC NBTI kinetics in RMG Si and SiGe p-FinFETs

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Abstract

An ultrafast characterization method is used to study DC and AC NBTI in Si and SiGe channel core RMG p-FinFETs. The time evolution of degradation during and after stress, and the impact of stress bias, temperature, frequency and duty cycle are characterized. A physics-based model is used to qualitatively explain measured data. The similarities and differences of DC and AC NBTI in Si and SiGe channel devices are highlighted.

Date

30 May 2017

Publication

IRPS 2017

Authors

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