Publication
IEDM 2014
Conference paper

Reliability challenges for the 10nm node and beyond

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Abstract

Technology elements for the 10nm node and beyond include FINFETs on bulk or SOI, replacement gate process, multi-workfunction gate stacks, self-aligned contacts, and alternative channel materials. This paper describes current trends and how improved physics understanding and models can enable us to anticipate the effects of scaling on reliability even in early stages of development.

Date

20 Feb 2015

Publication

IEDM 2014

Authors

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