Ruqiang Bao, K. Watanabe, et al.
VLSI Technology 2020
Technology elements for the 10nm node and beyond include FINFETs on bulk or SOI, replacement gate process, multi-workfunction gate stacks, self-aligned contacts, and alternative channel materials. This paper describes current trends and how improved physics understanding and models can enable us to anticipate the effects of scaling on reliability even in early stages of development.
Ruqiang Bao, K. Watanabe, et al.
VLSI Technology 2020
Miaomiao Wang, Sufi Zafar, et al.
Microelectronic Engineering
Narendra Parihar, Richard G. Southwick, et al.
IEEE T-ED
Tian Shen, K. Watanabe, et al.
IRPS 2020