Advanced Multi-Vt Enabled by Selective Layer Reductions for 2nm Nanosheet Technology and Beyond
- Ruqiang Bao
- Yusuke Oniki
- et al.
- 2024
- IEDM 2024
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60 results for Miaomiao Wang
Displacement Damage, Total Ionizing Dose, and Transient Ionization Effects in Gate-All-Around Field Effect Transistors
- Michael Titze
- Alex Belianinov
- et al.
- 2024
- ACS Applied Electronic Materials
Backside power distribution for nanosheet technologies beyond 2nm
- Ruilong Xie
- Wonhyuk Hong
- et al.
- 2024
- VLSI Technology and Circuits 2024
A New Clustering-Function-Based Formulation of Temporal and Spatial Clustering Model Involving Area Scaling and its Application to Parameter Extraction
- Ernest Wu
- Brian McGowan
- et al.
- 2024
- IRPS 2024
Challenges of gate stack TDDB in gate-all-around nanosheet towards further scaling
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2024
- IRPS 2024
Challenges of gate stack TDDB in gate-allaround nanosheet towards further scaling
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2024
- IRPS 2024
A Review of Reliability in Gate-All-Around Nanosheet Devices
- 2024
- Micromachines
A Unified TDDB Model for BEOL Dielectrics of Various Structures and Thick FEOL Dielectrics
- Kenji Okada
- Kei Date
- et al.
- 2024
- IEEE Transactions on Electron Devices
Impact of Gate Stack Thermal Budget on NBTI Reliability in Gate-All-Around Nanosheet P-type Devices
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2023
- IRPS 2023
Hardware Based Performance Assessment of Vertical-Transport Nanosheet Technology
- Gen Tsutsui
- Seunghyun Song
- et al.
- 2022
- IEDM 2022