Reliability Challenges of Emerging Transistor Materials and Architectures Beyond Traditional Scaling
- Hitoshi Wakabayashi
- Miaomiao Wang
- 2026
- IRPS 2026
Workshop
Publications
61 results for Miaomiao Wang
Hot Carrier Degradation and performance boost on Si Channel nFET Gate-All-Around Nanosheet Devices
- H. Zhou
- M. Hasanuzzaman
- et al.
- 2025
- IRPS 2025
Conference paperAdvanced Multi-Vt Enabled by Selective Layer Reductions for 2nm Nanosheet Technology and Beyond
- Ruqiang Bao
- Yusuke Oniki
- et al.
- 2024
- IEDM 2024
Conference paperDisplacement Damage, Total Ionizing Dose, and Transient Ionization Effects in Gate-All-Around Field Effect Transistors
- Michael Titze
- Alex Belianinov
- et al.
- 2024
- ACS Applied Electronic Materials
PaperBackside power distribution for nanosheet technologies beyond 2nm
- Ruilong Xie
- Wonhyuk Hong
- et al.
- 2024
- VLSI Technology and Circuits 2024
Conference paperChallenges of gate stack TDDB in gate-all-around nanosheet towards further scaling
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2024
- IRPS 2024
Conference paperA New Clustering-Function-Based Formulation of Temporal and Spatial Clustering Model Involving Area Scaling and its Application to Parameter Extraction
- Ernest Wu
- Brian McGowan
- et al.
- 2024
- IRPS 2024
Conference paperA Review of Reliability in Gate-All-Around Nanosheet Devices
- 2024
- Micromachines
PaperA Unified TDDB Model for BEOL Dielectrics of Various Structures and Thick FEOL Dielectrics
- Kenji Okada
- Kei Date
- et al.
- 2024
- IEEE Transactions on Electron Devices
PaperImpact of Gate Stack Thermal Budget on NBTI Reliability in Gate-All-Around Nanosheet P-type Devices
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2023
- IRPS 2023
Conference paper