Subtractive Ru Interconnect Enabled by Novel Patterning Solution for EUV Double Patterning and TopVia with Embedded Airgap Integration for Post Cu Interconnect Scaling

Abstract

Fully subtractive TopVia Ru interconnects with embedded airgap have been demonstrated. We demonstrate 18nm pitch structures patterned with spacer assisted litho-etch litho-etch. We also demonstrate a novel “TopVia” structure where the metallization for the via is performed together with the metallization for the line below, combined with an integrated airgap.