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High-mobility High-Ge-Content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width
- Pouya Hashemi
- Takashi Ando
- et al.
- 2015
- VLSI Technology 2015