Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor
- Miaomiao Wang
- Jingyun Zhang
- et al.
- 2019
- IRPS 2019
Publications
60 results for Miaomiao Wang
Extendable and Manufacturable Volume-less Multi-Vt Solution for 7nm Technology Node and beyond
- Ruqiang Bao
- Huimei Zhou
- et al.
- 2018
- IEDM 2018
Toward High Performance SiGe Channel CMOS: Design of High Electron Mobility in SiGe nFinFETs Outperforming Si
- Choonghyun Lee
- Richard G. Southwick
- et al.
- 2018
- IEDM 2018
Novel Materials and Processes in Replacement Metal Gate for Advanced CMOS Technology
- Ruqiang Bao
- Steven Hung
- et al.
- 2018
- IEDM 2018
Leakage aware Si/SiGe CMOS FinFET for low power applications
- G. Tsutsui
- C. Durfee
- et al.
- 2018
- VLSI Technology 2018
Channel Geometry Impact and Narrow Sheet Effect of Stacked Nanosheet
- Chun Wing Yeung
- Jingyun Zhang
- et al.
- 2018
- IEDM 2018
Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with Id-Vd characteristics
- Miaomiao Wang
- Richard G. Southwick
- et al.
- 2018
- IRPS 2018
Modeling of NBTI kinetics in RMG Si and SiGe FinFETs, Part-I: DC stress and recovery
- Narendra Parihar
- Richard G. Southwick
- et al.
- 2018
- IEEE T-ED
Modeling of NBTI kinetics in replacement metal gate Si and SiGe FinFETs - Part-II: AC stress and recovery
- Narendra Parihar
- Richard G. Southwick
- et al.
- 2018
- IEEE T-ED
Modeling of NBTI time kinetics and T dependence of VAF in SiGe p-FinFETs
- Narendra Parihar
- Richard G. Southwick
- et al.
- 2017
- IEDM 2017