Extendable and Manufacturable Volume-less Multi-Vt Solution for 7nm Technology Node and beyond

Abstract

We demonstrated more than 3 pairs of threshold voltage (Vt) devices by volume-less multiple Vt (multi-Vt) scheme plus dual work function metals (WFM) without performance and reliability degradation on 20nm gate length FinFET CMOS devices. Vt shifts over 200 mV were achieved for both nFET and pFET. The volume-less nature of this multi-Vt scheme relieves replacement metal gate (RMG) challenges and opens the path to offer multi-Vt solution for future highly scaled technologies.