Publication
IRPS 2019
Conference paper

Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor

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Abstract

In this paper, we report the bias temperature instability (BTI) reliability in stacked gate-all-around (GAA) nanosheet (NS) devices. We show that, in addition to its superior intrinsic performance over FinFET and stacked nanowire (NW), stacked NS can also provide NBTI reliability benefit, owing to domination of (100) surface conduction and mitigation of field enhancement effect in ultra-scaled GAA structure.

Date

22 May 2019

Publication

IRPS 2019

Authors

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