IRPS 2019
Conference paper

Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor

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In this paper, we report the bias temperature instability (BTI) reliability in stacked gate-all-around (GAA) nanosheet (NS) devices. We show that, in addition to its superior intrinsic performance over FinFET and stacked nanowire (NW), stacked NS can also provide NBTI reliability benefit, owing to domination of (100) surface conduction and mitigation of field enhancement effect in ultra-scaled GAA structure.