Modeling of NBTI time kinetics and T dependence of VAF in SiGe p-FinFETs

Abstract

NBTI in Replacement Metal Gate (RMG) High-K Metal Gate (HKMG) SiGe p-FinFETs is modeled. Time kinetics for DC and AC stress and recovery, temperature (T) dependence of voltage acceleration factor (VAF), and impact of Ge% and N% are quantified. Benchmarking is done with Si p-FinFETs, and process (Ge%, N%) dependence is explained by TCAD and band structure calculations.