Abstract
We present an aggressively scaled trigate device architecture with undoped channels, high-κ gate dielectric, a single work function metal gate and novel BEOL processing yielding 6T SRAM bit cells as small as 0.06 μm 2. This is the smallest SRAM cell demonstrated to date and represents the first time an SRAM based on a multi-gate FET (MUGFET) architecture has surpassed SRAM density scaling demonstrated with planar devices [1]. © 2009 IEEE.