First demonstration of high retention energy barriers and 2 ns switching, using magnetic ordered-alloy-based STT MRAM devices
- Matthias Gottwald
- Guohan Hu
- et al.
- 2024
- VLSI Technology and Circuits 2024
Publications
Date
Featured collections
Popular topics
194 results for Christian Lavoie
State-Independent Low Resistance Drift SiSbTe Phase Change Memory for Analog In-Memory Computing Applications
- Michelle Cheng
- Zhi-Lun Liu
- et al.
- 2024
- VLSI Technology and Circuits 2024
Highly textured (100)-oriented and (111)-oriented, cobalt mono silicide nanoribbons: material growth and device fabrication
- Guy Cohen
- Peter Kerns
- et al.
- 2024
- MRS Spring Meeting 2024
New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low Vth Drift at 85oC and High Endurance 3D Crosspoint Memory
- Michelle Cheng
- Alexander Grun
- et al.
- 2022
- IEDM 2022
New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low VthDrift at 85 °C and High Endurance 3D Crosspoint Memory : IBM/Macronix PCRAM Joint Project
- Huai-Yu Cheng
- A. Grun
- et al.
- 2022
- IEDM 2022
Optimizing AsSeGe Chalcogenides by Dopants for Extremely Low IOFF, High Endurance and Low Vth Drift 3D Crosspoint Memory
- Huai-Yu Cheng
- Wei-Chih Chien
- et al.
- 2021
- IEDM 2021
Parasitic Resistance Reduction Strategies for Advanced CMOS FinFETs beyond 7nm
- Heng Wu
- Oleg Gluschenkov
- et al.
- 2018
- IEDM 2018
High Performance InGaAs Gate-All-Around Nanosheet FET on Si Using Template Assisted Selective Epitaxy
- S. Lee
- Cheng-Wei Cheng
- et al.
- 2018
- IEDM 2018
Metal-catalyzed graphitization in Ni-C alloys and amorphous-C/Ni bilayers
- Katherine L. Saenger
- Christian Lavoie
- et al.
- 2010
- MRS Fall Meeting 2010
Trigate 6T SRAM scaling to 0.06 μm2
- M. Guillorn
- J. Chang
- et al.
- 2009
- IEDM 2009