Plasma etch patterning of EUV lithography: Balancing roughness and selectivity trade off
- Sebastian U. Engelmann
- Qinghuang Lin
- et al.
- 2016
- SPIE Advanced Lithography 2016
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108 results for Sebastian Engelmann
SiGe-on-insulator symmetric lateral bipolar transistors
- Jeng-Bang Yau
- Jin Cai
- et al.
- 2015
- S3S 2015
Enabling large-scale deployment of photonics through cost-efficient and scalable packaging
- Tymon Barwicz
- Yoichi Taira
- et al.
- 2015
- GFP 2015
High-mobility high-Ge-content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width
- Pouya Hashemi
- Takashi Ando
- et al.
- 2015
- VLSI Circuits 2015
High-mobility High-Ge-Content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width
- Pouya Hashemi
- Takashi Ando
- et al.
- 2015
- VLSI Technology 2015
An o-band metamaterial converter interfacing standard optical fibers to silicon nanophotonic waveguides
- Tymon Barwicz
- Alexander Janta-Polczynski
- et al.
- 2015
- OFC 2015
Optical demonstration of a compliant polymer interface between standard fibers and nanophotonic waveguides
- Tymon Barwicz
- Yoichi Taira
- et al.
- 2015
- OFC 2015
Photonic packaging in high-throughput microelectronic assembly lines for cost-efficiency and scalability
- Tymon Barwicz
- Yoichi Taira
- et al.
- 2015
- OFC 2015
Strained SiGe on insulator FinFETs: A P-FET candidate for 10nm node (Invited)
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2014
- ECSSMEQ 2014
Strained Si1-xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2014
- VLSI Technology 2014