High endurance self-heating OTS-PCM pillar cell for 3D stackable memory
- C. Yeh
- W. Chien
- et al.
- 2018
- VLSI Technology 2018
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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33 results for Wanki Kim
Reliability benefits of a metallic liner in confined PCM
- Wanki Kim
- S. Kim
- et al.
- 2018
- IRPS 2018
A Double-Data-Rate 2 (DDR2) Interface Phase-Change Memory with 533MB/s Read-Write Data Rate and 37.5ns Access Latency for Memory-Type Storage Class Memory Applications
- H. Lung
- C. Miller
- et al.
- 2016
- IMW 2016
A novel self-converging write scheme for 2-bits/cell phase change memory for Storage Class Memory (SCM) application
- W. Chien
- Yung-Han Ho
- et al.
- 2015
- VLSI Technology 2015
Strained SiGe on insulator FinFETs: A P-FET candidate for 10nm node (Invited)
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2014
- ECSSMEQ 2014
Strained Si1-xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2014
- VLSI Technology 2014
Towards the integration of both ROM and RAM functions phase change memory cells on a single die for system-on-chip (SOC) applications
- H. Lung
- Matthew BrightSky
- et al.
- 2014
- VLSI Technology 2014
High-performance Si1-xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions
- P. Hashemi
- M. Kobayashi
- et al.
- 2013
- VLSI Circuits 2013
High-performance Si1-xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions
- P. Hashemi
- M. Kobayashi
- et al.
- 2013
- VLSI Technology 2013
Phase-change memory cycling endurance
- Sangbum Kim
- Geoffrey W. Burr
- et al.
- 2019
- MRS Bulletin