About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
VLSI Technology 2015
Conference paper
A novel self-converging write scheme for 2-bits/cell phase change memory for Storage Class Memory (SCM) application
Abstract
A new phase change material that provides fast SET speed, high cycling endurance, and large resistance window suitable for MLC SCM is investigated. Thorough understanding of the factors that affect the resistance distribution taught us to avoid operating near the melting temperature of the phase change material. By exploiting the self-converging property of low current SET operation we have designed a novel write scheme that provides fast and accurate MLC programming. High performance and high reliability 2-bits/cell MLC is demonstrated on a 512Mb test chip.