Publication
IEDM 2015
Conference paper

Novel fast-switching and high-data retention phase-change memory based on new Ga-Sb-Ge material

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Abstract

Attempts to improve the retention so far must sacrifice switching speed. This work explores new phase change material based on pseudobinary GaSb-Ge system. The resulting new phase-change material has demonstrated fast switching speed of 80 ns, long endurance of 1G cycles and excellent data retention that survives 250 °C-300 hrs. The 10 years-220 °C data retention is the best ever reported. It is also the fastest material that can pass the solder bonding criteria for embedded automotive applications.

Date

16 Feb 2015

Publication

IEDM 2015

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