Sub-30 nm P+ abrupt junction formation in strained Si/Si1-xGex MOS device
- K.L. Lee
- J.O. Chu
- et al.
- 2002
- IEDM 2002
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149 results for John A. Ott
High mobility p-channel germanium MOSFETS with a thin Ge oxynitride gate dielectric
- Huiling Shang
- Harald Okorn-Schmidt
- et al.
- 2002
- IEDM 2002
Integration issues for diamond like carbon in a copper damascene process flow
- A. Grill
- C.V. Jahnes
- et al.
- 1998
- MRS Spring Meeting 1998
High performance 0.25 mu m p-MOSFETs with silicon-germanium channels for 300 K and 77 K operation
- V.P. Kesan
- S. Subbana
- et al.
- 1991
- IEDM 1991
High-speed logic integrated circuits with solution-processed self-assembled carbon nanotubes
- Shu Jen Han
- Jianshi Tang
- et al.
- 2017
- Nature Nanotechnology
Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene
- Jeehwan Kim
- Can Bayram
- et al.
- 2014
- Nature Communications
Dust-Sized High-Power-Density Photovoltaic Cells on Si and SOI Substrates for Wafer-Level-Packaged Small Edge Computers
- Ning Li
- Kevin Han
- et al.
- 2020
- Advanced Materials
Ultra-low-power sub-photon-voltage high-efficiency light-emitting diodes
- Ning Li
- Kevin Han
- et al.
- 2019
- Nature Photonics
High-performance air-stable n-type carbon nanotube transistors with erbium contacts
- Davood Shahrjerdi
- Aaron D. Franklin
- et al.
- 2013
- ACS Nano
Epitaxial graphene nanoribbon array fabrication using BCP-assisted nanolithography
- Guanxiong Liu
- Yanqing Wu
- et al.
- 2012
- ACS Nano