High speed silicon lateral trench detector on SOI substrate
- Min Yang
- Jeremy Schaub
- et al.
- 2001
- Technical Digest-International Electron Devices Meeting
Paper
Publications
34 results for Jeff Welser
Small silicon memories: Confinement, single-electron, and interface state considerations
- S. Tiwari
- J.A. Wahl
- et al.
- 2000
- Applied Physics A: Materials Science and Processing
PaperStraddle gate transistors: High Ion/Ioff transistors at short gate lengths
- S. Tiwari
- J.J. Welser
- et al.
- 1999
- DRC 1999
PaperNanoscale CMOS
- Hon-Sum Philip Wong
- David J. Frank
- et al.
- 1999
- Proceedings of the IEEE
PaperCMOS and memories: From 100 nm to 10 nm!
- Sandip Tiwari
- Paul M. Solomon
- et al.
- 1999
- Microelectronic Engineering
PaperElectric-field penetration into metals: consequences for high-dielectric-constant capacitors
- Charles T. Black
- Jeffrey J. Welser
- 1999
- IEEE Transactions on Electron Devices
PaperStraddle-gate transistor: Changing MOSFET channel length between off- and on-state towards achieving tunneling-defined limit of field-effect
- S. Tiwari
- J.J. Welser
- et al.
- 1998
- IEDM 1998
Conference paperCurrents, surface potentials, and defect generation in 1.2-1.5 nm oxide MOSFETs
- S. Tiwari
- J.J. Welser
- et al.
- 1998
- DRC 1998
Conference paperKinetic modelling of electron tunneling processes in quantum dots coupled to field-effect transistors
- Farhan Rana
- Sandip Tiwari
- et al.
- 1998
- Superlattices and Microstructures
PaperHole mobility improvement in silicon-on-insulator and bulk silicon transistors using local strain
- S. Tiwari
- M.V. Fischetti
- et al.
- 1997
- IEDM 1997
Conference paper