Straddle-gate transistor: Changing MOSFET channel length between off- and on-state towards achieving tunneling-defined limit of field-effect

Abstract

The straddle-gate transistor is developed, a pentode-like structure that incorporates the ideas with that of a back-plane structure to achieve an approximately 10 nm length scale, where field-effect still dominates, and where the fundamental constraint of source-to-drain tunneling through silicon is restrained by modulating the effective channel length of the device between the on-state and the off-state. Theoretically, it achieves this length scale within the constraints of power and density, but at the expense of smaller speed improvements.