Mark W. Dowley
Solid State Communications
The dimensional limit where field-effect can still be gainfully employed is of the order of 10 nm. Other constraints that limit our use of field-effect are: random fluctuations in doping and thickness, gate insulator tunneling, electrostatic control of the channel, resistive and capacitive parasitics, device leakage and reliability, and the economics of any solution proposed. This contribution shows that physics allows devices that fulfill the need of microelectronics down to 10 nm length scale and summarizes experimental results that point out some of the directions that might be appropriate.
Mark W. Dowley
Solid State Communications
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
Eloisa Bentivegna
Big Data 2022