A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Lateral trench photodetectors (LTD) on silicon-on-insulator (SOI) have been fabricated using a fully CMOS compatible process. High speed (2.0 GHz), high quantum efficiency (51%), and excellent frequency response characteristics have been achieved at 851 nm with a supply voltage of only 3.3 V.
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
David B. Mitzi
Journal of Materials Chemistry
A. Gangulee, F.M. D'Heurle
Thin Solid Films