Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Lateral trench photodetectors (LTD) on silicon-on-insulator (SOI) have been fabricated using a fully CMOS compatible process. High speed (2.0 GHz), high quantum efficiency (51%), and excellent frequency response characteristics have been achieved at 851 nm with a supply voltage of only 3.3 V.
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials