Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
Lateral trench photodetectors (LTD) on silicon-on-insulator (SOI) have been fabricated using a fully CMOS compatible process. High speed (2.0 GHz), high quantum efficiency (51%), and excellent frequency response characteristics have been achieved at 851 nm with a supply voltage of only 3.3 V.
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
Hiroshi Ito, Reinhold Schwalm
JES
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures