Transient and end silicide phase formation in thin film Ni/polycrystalline-Si reactions for fully silicided gate applications
- J.A. Kittl
- M.A. Pawlak
- et al.
- 2007
- Applied Physics Letters
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194 results for Christian Lavoie
Thin film solid-state reactions forming carbides as contact materials for carbon-containing semiconductors
- W.P. Leroy
- C. Detavernier
- et al.
- 2007
- Journal of Applied Physics
Formation and morphological stability of NiSi in the presence of W, Ti, and Ta alloying elements
- D. Deduytsche
- C. Detavernier
- et al.
- 2007
- Journal of Applied Physics
Influence of Ge substrate crystallinity on Co germanide formation in solid-state reactions
- K. Opsomer
- D. Deduytsche
- et al.
- 2007
- Applied Physics Letters
Effects of additive elements on the phase formation and morphological stability of nickel monosilicide films
- C. Lavoie
- C. Detavernier
- et al.
- 2006
- Microelectronic Engineering
Reaction of thin Ni films with Ge: Phase formation and texture
- S. Gaudet
- C. Detavernier
- et al.
- 2006
- Journal of Applied Physics
Thin film reaction of transition metals with germanium
- S. Gaudet
- C. Detavernier
- et al.
- 2006
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Solid-state formation of titanium carbide and molybdenum carbide as contacts for carbon-containing semiconductors
- W.P. Leroy
- C. Detavernier
- et al.
- 2006
- Journal of Applied Physics
High-temperature degradation of NiSi films: Agglomeration versus NiSi 2 nucleation
- D. Deduytsche
- C. Detavernier
- et al.
- 2005
- Journal of Applied Physics
Evaluation of thermal stability for CMOS gate metal materials
- C. Cabral Jr.
- C. Lavoie
- et al.
- 2004
- JES