L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Metal-gate FinFET and FDSOI devices were fabricated using total gate silicidation. Devices satisfy the following metal-gate technology requirements: ideal mobility, low gate leakage, high transconductance, competitive Ion/Ioff and adjustable Vt. Six suicide gate materials are presented, as well as two silicide workfunction engineering methods.
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
J.A. Barker, D. Henderson, et al.
Molecular Physics
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures