Performance enhancement on sub-70 nm strained silicon SOI MOSFETS on ultra-thin thermally mixed strained silicon/SiGe on insulator(TM-SGOI) substrate with raised S/D

Abstract

High quality ultra-thin thermally mixed strained silicon/SiGe on insulator (TM-SGOI) substrate was developed to combine the device benefits of strained silicon and SOI. 80-90% saturated drain current and electron mobility increase were shown in long channel nFET device. Results showed 20-25% device performance enhancement at 55 nm short channel strained silicon SGOI nFET devices.