Publications

60 results for Hemanth Jagannathan

FINFET technology featuring high mobility SiGe channel for 10nm and beyond
- - Dechao Guo
  - G. Karve
  - et al.
- 2016
- VLSI Technology 2016
Tungsten and cobalt metallization: A material study for MOL local interconnects
- - Vimal Kamineni
  - Mark Raymond
  - et al.
- 2016
- IITC/AMC 2016
SiO₂ free HfO₂ gate dielectrics by physical vapor deposition
- - P. Jamison
  - Takaaki Tsunoda
  - et al.
- 2015
- IEEE T-ED
10nm FINFET technology for low power and high performance applications
- - D. Guo
  - H. Shang
  - et al.
- 2014
- ICSICT 2014
Superior PBTI reliability for SOI FinFET technologies and its physical understanding
- - Miaomiao Wang
  - Ramachandran Muralidhar
  - et al.
- 2013
- IEEE Electron Device Letters
Mechanism for leakage reduction by la incorporation in a HfO ₂SiO₂Si gate stack
- - Kenzo Manabe
  - Koji Watanabe
  - et al.
- 2013
- IEEE Electron Device Letters
Phenomena of dielectric capping layer insertion into high-κ metal gate stacks in gate-first/gate-last integration
- - H. Jagannathan
  - P. Jamison
  - et al.
- 2012
- ECS Meeting 2012
Detailed study of fast transient relaxation of Vt instability in HKMG nFETs
- - K. Zhao
  - James Stathis
  - et al.
- 2012
- IRPS 2012
Physical characterization of sub-32-nm semiconductor materials and processes using advanced ion beam-based analytical techniques
- - M. Hopstaken
  - D. Pfeiffer
  - et al.
- 2012
- Surface and Interface Analysis
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
- - S. Krishnan
  - U. Kwon
  - et al.
- 2011
- IEDM 2011