Absence of magnetism in hafnium oxide films
- 2005
- Applied Physics Letters
Paper
Publications
93 results for Martin M Frank
On the location and magnitude of trapped charge in poly- Si ALD-Al 2O3 capped Hf-silicate gate stacks
- Kingsuk Maitra
- Barry P. Linder
- et al.
- 2005
- PRiME/ECS Meeting 2005
Conference paperOptimization of high κ gate stacks with poly-Si, FUSI and metal electrodes
- R. Jammy
- V. Narayanan
- et al.
- 2005
- ISTC 2005
Conference paperSub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon
- N.V. Nguyen
- Albert V. Davydov
- et al.
- 2005
- Applied Physics Letters
PaperPoly-Si/high-k gate stacks with near-ideal threshold voltage and mobility
- M.M. Frank
- V.K. Paruchuri
- et al.
- 2005
- VLSI-TSA 2005
Conference paperHf O 2 and Al 2 O 3 gate dielectrics on GaAs grown by atomic layer deposition
- Martin M. Frank
- Glen D. Wilk
- et al.
- 2005
- Applied Physics Letters
PaperAdvanced gate stacks with fully silicided (FUSI) gates and high-κ dielectrics: Enhanced performance at reduced gate leakage
- E. Gusev
- C. Cabral Jr.
- et al.
- 2004
- IEDM 2004
Conference paperSystematic study of pFET Vt with Hf-based gate stacks with poly-Si and FUSI gates
- E. Cartier
- V. Narayanan
- et al.
- 2004
- VLSI Technology 2004
Conference paperGas phase chlorination of hydrogen-passivated silicon surfaces
- Sandrine Rivillon
- Fabrice Amy
- et al.
- 2004
- Applied Physics Letters
PaperHafnium oxide gate dielectrics grown from an alkoxide precursor: Structure and defects
- Martin M. Frank
- Safak Sayan
- et al.
- 2004
- Materials Science and Engineering: B
Conference paper